IPG20N10S4-36A Datasheet

IPG20N10S4-36A

Datasheet specifications

Datasheet's name IPG20N10S4-36A
File size 64.704 KB
File type pdf
Number of pages 9

Download Datasheet IPG20N10S4-36A

Download Datasheet

Other documentations

No other documentation was found!

Technical specifications

  • RoHS: true
  • Type: 2 N-Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Infineon Technologies IPG20N10S4-36A
  • Power Dissipation (Pd): 43W
  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 20A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@16uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 36mΩ@10V,17A
  • Package: TDSON-8-4
  • Manufacturer: Infineon Technologies

Similar products